dpg 60 c 300qb hiperfred symbol definition r a t i n g s features / advantages: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch typ. max. i fsm i r a a v 300 i fav a v f 1.34 r thjc 0.95 k/w v r = 123 min. 30 ms (50 hz), sine applications: antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) v rrm v 300 1 t vj v c = t vj c = ma 0.1 package: part number v r = t vj = c i f =a v t c =135c rectangular, d = 0.5 p tot 160 w t c c = a i rm 3 /dt i f =a; v r =v a t rr e as 4mj t vj c = i as =a;l = h i ar a v a = 0.9 f = 10 khz 1.5v r typ.; t vj 175 c -55 high performance fast recovery diode low loss and soft recovery common cathode v i t rrm fav rr = = = 300 30 35 30 t vj =45c 30 -di f = 200 a/s 100 9 100 dpg 60 c 300qb v a ns 300 v 300 25 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time conditions unit (marking on product) 1.69 t vj c = 25 c j 40 pf j unction capacitance v r =v; 150 t vj 150 v f0 v 0.70 t vj =175c r f 10.5 ? f = 1 mhz =c 25 m to-3p v 1.06 t vj =c i f =a v 30 150 1.39 i f =a 60 i f =a 60 ns 35 ns industry standard outline - compatible with to-247 epoxy meets ul 94v-0 rohs compliant t vj c =25 t vj c =125 t vj c =25 t vj c =125 2x threshold voltage slope resistance for power loss calculation only ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0614 * data according to iec 60747and per diode unless otherwise specified
dpg 60 c 300qb i rms a per pin* 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 5 max d1 ?p s ?p1 l l1 e1 e e b2 c d b4 b a2 a a1 min sym min max symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole current capability can be used by c onnecting the backside. outlines to-3p f c n 120 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0614 * data according to iec 60747and per diode unless otherwise specified
dpg 60 c 300qb 200 600 1000 0 400 800 20 30 40 50 60 70 80 90 100 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 04080120160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 v fr di f /dt v 200 600 1000 0400800 5 15 25 0 10 20 30 100 1000 0 100 200 300 400 500 600 700 i rm q r i f a v f -di f /dt -di f /dt a/ s a v c t rr ns t fr z thjc a/ s ns a/ s a/ s 0.0 0.4 0.8 1.2 1.6 0 10 20 30 40 50 60 70 80 25c i f = 60 a 30 a 15 a i f = 60 a 30 a 15 a i rm q rr i f = 60 a 30 a 15 a v fr t fr 125c v r = 200 v i f = 30 a di f /dt = 500 a/s t vj = 125c v r = 200 v t vj = 125c v r = 200 v i f = 30 a DPG60C300QB t vj = 125c v r = 200 v t vj = 150c t vj = 125c v r = 200 v fig. 1 forward current i f vs. v f fig. 2 typ. reverse recovery charge q r versus -di f /dt fig. 3 typ. peak reverse current i r m versus -di f /dt fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 typ. recovery time t rr vs. -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal impedance junction to case constants for z thjc calculation: i r thi t i [k/w] [s] 1 0.505 0.005 2 0.195 0.0003 3 0.250 0.041 ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0614 * data according to iec 60747and per diode unless otherwise specified
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